|
|
GaAs中空穴陷阱A,B能级的热力学性质 |
府治平;吕东梁;詹千宝;周继程 |
中国科学院上海冶金研究所;中国科学院上海冶金研究所;中国科学院上海冶金研究所;中国科学院上海冶金研究所;上海(200050)中国科学院上海冶金研究所 |
|
THERMODYNAMIC PROPERTIES OF HOLE TRAPS A AND B IN GaAs |
FU Zhiping;LU Dongliang;ZHAN Qianbao;ZHOU Jicheng Shanghai Institute of Metallurgy; Academia Sinica; Correspondent professor; Shanghai Institute of MetaHurgy; Academia Sinica; Shanghai 20050 |
引用本文:
府治平;吕东梁;詹千宝;周继程. GaAs中空穴陷阱A,B能级的热力学性质[J]. 金属学报, 1992, 28(5): 59-63.
,
,
,
.
THERMODYNAMIC PROPERTIES OF HOLE TRAPS A AND B IN GaAs[J]. Acta Metall Sin, 1992, 28(5): 59-63.
1 邹元燨.全国微波技术会议,石家庄,1974 2 Long D V, Logan R A. J Electron Mater, 1975; 4: 1053 3 邹元燨.见:全国砷化镓及其它Ⅲ-Ⅴ族化合物半导体会议文集,柳州,1977:48 4 Zhou Jicheng, Luo Yian, Li Liansheng, Lu Bingfang, Zhang Jue. Mater Lett, 1987; 5: 479 5 Zhou Jicheng, Li Liansheng, Liu Miaoxiu, Lu Bingfang, Zhang Jue. Mater Lett, 1987; 6: 247 6 Zhou Jicheng, Luo Yian, Lu Bingfang, Zhan Qianbao. Mater Lett, 1988; 7: 391 7 Tegude F J, Baston J, Arnold N, Heime K. In: Persented at 2nd conf on Si Ⅲ-Ⅴ Materials, Evian, France, 1982 8 Chiang S Y, Pcarson G L. J Appl Phys, 1975; 46: 2986 9 Zou Y, Zhou J, Lu Y, Wang G, Hu B, Li C, Li L, Shao J, Sheng C. J Electron Mater, 1985; 14A: 1021 10 Zhou Jicheng, Fu Zhiping, Zhan Qianbao, Feng Shuifu. In: Swaminathan V, Manasreh O, Pearton S J eds., Proc MRS Spring Meeting, Vol. 184, Pittsburgh, PA: Materials Research Society, 1990: 68 11 李爱珍,潘慧珍,杨倩志,唐嫱妹,邱建华,曹自立,陈国建.见:全国砷化镓及其它Ⅲ-Ⅴ族化合物半导体会议文集,柳州,1977:54 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|