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金属学报  2019, Vol. 55 Issue (3): 299-307    DOI: 10.11900/0412.1961.2018.00109
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双脉冲HiPIMS放电特性及CrN薄膜高速率沉积
吴厚朴,田修波(),张新宇,巩春志
哈尔滨工业大学先进焊接与连接国家重点实验室 哈尔滨 150001
Discharge Characteristics of Novel Dual-Pulse HiPIMS and Deposition of CrN Films with High Deposition Rate
Houpu WU,Xiubo TIAN(),Xinyu ZHANG,Chunzhi GONG
State Key Laboratory of Advanced Welding Production and Technology, Harbin Institute of Technology, Harbin 150001, China
引用本文:

吴厚朴,田修波,张新宇,巩春志. 双脉冲HiPIMS放电特性及CrN薄膜高速率沉积[J]. 金属学报, 2019, 55(3): 299-307.
Houpu WU, Xiubo TIAN, Xinyu ZHANG, Chunzhi GONG. Discharge Characteristics of Novel Dual-Pulse HiPIMS and Deposition of CrN Films with High Deposition Rate[J]. Acta Metall Sin, 2019, 55(3): 299-307.

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摘要: 

提出了一种新型的高功率脉冲磁控溅射(HiPIMS)技术,即放电由脉宽短、电压高的引燃脉冲和脉宽长、电压低的工作脉冲2部分组成的双脉冲高功率脉冲磁控溅射技术,目的是解决传统高功率脉冲磁控溅射沉积速率低的问题。研究了引燃脉冲电压及传统高功率脉冲磁控溅射条件对Cr靶在Ar气气氛下的放电特性的影响,并制备CrN薄膜。结果表明:随着引燃脉冲电压的施加,双脉冲高功率脉冲磁控溅射Cr靶放电瞬间建立,并获得较高的峰值电流,而传统HiPIMS模式的输出是渐渐爬升的三角波电流;与传统高功率脉冲磁控溅射相比,单位功率下双脉冲高功率脉冲磁控溅射具有更高的基体电流积分以及更多的Ar+和Cr0数量;引燃脉冲电压为590 V时,双脉冲高功率脉冲磁控溅射单位功率下CrN薄膜沉积速率为2.52 μm/(h·kW),比传统高功率脉冲磁控溅射提高近3倍。

关键词 双脉冲高功率脉冲磁控溅射引燃脉冲放电特性CrN薄膜    
Abstract

High power impulse magnetron sputtering (HiPIMS) is of great significance for improving the quality of sputtered films because of its high ionization degree of sputtered particles and high ion fluxes. Therefore, it has been widely studied by researchers. However, the conventional HiPIMS shows a significantly low deposition rate, which greatly limits the industrial applications of HiPIMS. In this work, a novel high power impulse magnetron sputtering is proposed to enhance the low deposition rate encountered in conventional HiPIMS. The novel technology is based on dual pulses discharge mode, in which a pulsed high voltage with short duration is utilized to high-current discharge and produce initial high density plasma and a subsequent work-pulse of low voltage with long duration is employed to sustain the high-current discharge. Consequently the re-adsorption effect by magnetron target may be weakened. The influence of ignition pulse voltage discharge characteristics of Cr target and microstructure of CrN films were investigated. The discharge characteristics of Cr target and the structure characteristics of CrN coatings were characterized by digital oscilloscope, spectrometer, focused ion beam/electron beam dual-beam microscope and X-ray diffraction. The results show that the discharge of Cr target is ignited rapidly and the discharge current is substantially large with the ignition voltage applied to the target. In contrast, the pulse current gradually rises for the conventional HiPIMS meaning a weak discharge. Compared with the conventional HiPIMS, the dual-pulse HiPIMS produce a higher substrate current integral value and more amount of Ar+ and Cr0 with the same input power. With ignition pulse voltage of 590 V, the deposition rate at unit power for CrN coating is 2.52 μm/(h·kW) for dual-pulse HiPIMS, which is nearly three times higher than that of conventional HiPIMS. With the increase of the ignition pulse voltage, the CrN films prepared by dual-pulse HiPIMS possess denser structure with smaller grain size.

Key wordsdual-pulse high power impulse magnetron sputtering    ignition pulse    discharge characteristics    CrN coating
收稿日期: 2018-03-23     
ZTFLH:  TB43  
基金资助:国家自然科学基金项目(11675047);国家自然科学基金项目(11875119);国家自然科学基金项目(51811530059)
作者简介: 吴厚朴,男,1995年生,博士生
图1  双脉冲高功率脉冲磁控溅射(HiPIMS)沉积系统示意图
图2  双脉冲HiPIMS不同引燃脉冲电压及传统HiPIMS条件下靶电压和靶电流波形图
图3  双脉冲HiPIMS引燃脉冲电压及HiPIMS条件对靶材平均功率的影响
图4  双脉冲HiPIMS不同引燃脉冲电压及HiPIMS条件下基体电流波形图
图5  双脉冲HiPIMS引燃脉冲电压及HiPIMS条件对单位功率基体电流积分的影响
图6  传统HiPIMS及双脉冲HiPIMS放电机理示意图
图7  双脉冲HiPIMS引燃脉冲电压及HiPIMS条件对Ar+和Cr0的单位功率特征光谱强度的影响
图8  双脉冲HiPIMS不同引燃脉冲电压及HiPIMS条件下CrN薄膜表面与截面形貌的SEM像
图9  双脉冲HiPIMS不同引燃脉冲电压下CrN薄膜的XRD谱
图10  双脉冲HiPIMS引燃脉冲电压对CrN薄膜晶粒尺寸的影响
图11  双脉冲HiPIMS引燃脉冲电压及HiPIMS条件对CrN薄膜单位功率沉积速率的影响
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