激光诱导转移技术制备超精细导电图案研究进展
袁康, 曹文鑫, 孙春强, 王卓超, 王笑笑, 张宇民, 朱嘉琦

Research Progress on the Preparation of Ultrafine Conductive Patterns Using Laser-Induced Transfer Technology
YUAN Kang, CAO Wenxin, SUN Chunqiang, WANG Zhuochao, WANG Xiaoxiao, ZHANG Yumin, ZHU Jiaqi
表3 常见LIT用材料的兼容性与转移机制[53~64]
Table 3 Material compatibilities and transfer mechanisms for common LIT-used materials[53-64]
Material typeTransfer characteristicKey parameter and caseRef.

Metal thin film

Dominated by melting-solidification phase transformation, with control over thermal diffusion length

Au nanoparticles (60 nm film thickness): 30 fs, 78 nJ, 800 nm diameter;

Cu-Ag alternating layers (4 layers, total thickness ≈ 500 nm): 532 nm laser wavelength, 1 ns, 5 μJ, 10 μm transferred voxel diameter

[53,54]

Biological material

Protected by DRL, enabling low-damage transfer

cDNA: 355 nm laser wavelength, 10 ns, 0.5 μJ, 40 μm spot diameter; peptide microarray (SLEC matrix, 10% w/w): 405 nm laser wavelength, 7 ms, 90 mW, 110 μm fluorescent spot diameter

[55,56]

Semiconductor

Non-linear ionization and lattice reconstruction, relying on beam shaping

Si NPs: 800 nm laser wavelength (linear absorption) to obtain 205 nm particles;

silicon semiconductor components (100 μm × 100 μm × 90 μm): 355 nm laser wavelength, 10 ns, 245-700 mJ·cm-2

[57,58]

Conductive polymer

Sacrificial layer absorbs laser to generate gasification for propulsion, with low-temperature transfer protecting functional groups

PVP/5%f-MWCNT composite material (on Al micro-electrodes): 266 nm laser wavelength, 220 mJ·cm-2, 30 μm × 40 μm pixels;

PEDOT:PSS:GO composite film (80 nm thickness): 193 nm laser wavelength, 15 ns, 450 mJ·cm-2

[59,60]

Liquid ink

Bubble-jet fluid dynamics, breaking through viscosity/particle limitations

Silver paste (50 μm thickness): 532 nm laser wavelength, 15 ns, 3.2 J·cm-2, 70 μm diameter; silver screen printing ink (80 μm film thickness): 1064 nm laser wavelength, 100 ns, 60 μJ, 160 μm voxel diameter

[61,62]

3D structure

Droplet stacking, with optimized interface bonding

Cu pillar (diameter less than 5 μm, length 2 mm): 515 laser wavelength, 6.7 ps, vertical interconnection TS;

Au cantilever ( width × thickness × length = 50 μm × (10-20) μm × (450-800) μm): 532 nm laser wavelength, 0.8 ns, 4 μJ

[63,64]