集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升
黄明亮, 王胜博, 尤海潮, 刘厚麟, 任婧, 黄斐斐

Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement
HUANG Mingliang, WANG Shengbo, YOU Haichao, LIU Houlin, REN Jing, HUANG Feifei
表1 β-Sn各向异性参数
Table 1 Anisotropic properties of β-Sn

Axis

Resistivity

10-7 Ω·m

Coefficient of thermal expansion

10-6oC-1

Young's modulus

GPa

Diffusivity in β-Sn (150 oC)

cm2·s-1

Sn self-diffusivity (150 oC)

cm2·s-1

AgCuNi
a1.0115.4522.95.60 × 10-111.99 × 10-73.85 × 10-98.70 × 10-13
c1.5430.5068.93.13 × 10-98.57 × 10-61.17 × 10-44.71 × 10-13