集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升

黄明亮, 王胜博, 尤海潮, 刘厚麟, 任婧, 黄斐斐

Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement

HUANG Mingliang, WANG Shengbo, YOU Haichao, LIU Houlin, REN Jing, HUANG Feifei

图9 通过Sn在单晶IMC片上形核凝固调控β-Sn晶粒取向[95]

Fig.9 Nucleation of Sn droplets on the facets of single-crystal IMCs[95] (a-c) typical α-CoSn3, PtSn4, and β-IrSn4 single crystals, respectively (d) a typical example of Sn droplets solidified on the (001) facet of β-IrSn4 (e) summarized pole figures of β-Sn orientations with respect to the largest facets of α-CoSn3, PtSn4, and β-IrSn4