集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升

黄明亮, 王胜博, 尤海潮, 刘厚麟, 任婧, 黄斐斐

Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement

HUANG Mingliang, WANG Shengbo, YOU Haichao, LIU Houlin, REN Jing, HUANG Feifei

图7 基于液-固电迁移“极性效应”提出的电流驱动键合方法[49]

Fig.7 Current driven bonding (CDB) method based on the polarity effect during L-S EM[49] (a) cross-sectional SEM image of (001) Cu/Cu6Sn5/polycrystalline Cu interconnects (b) EBSD orientation image maps in RD for interconnect