集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升
Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement
(a) 200 h (b) 400 h (c) 600 h (d) 600 h (polished) (e) corresponding EBSD map in RD
集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升 |
| 黄明亮, 王胜博, 尤海潮, 刘厚麟, 任婧, 黄斐斐 |
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Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement |
| HUANG Mingliang, WANG Shengbo, YOU Haichao, LIU Houlin, REN Jing, HUANG Feifei |
| 图3 β-Sn晶粒各向异性对电迁移过程中金属间化合物(IMC)生长的影响[ |
| Fig.3 Effect of anisotropy of β-Sn grains on the growth behavior of IMCs under EM[ (a) 200 h (b) 400 h (c) 600 h (d) 600 h (polished) (e) corresponding EBSD map in RD |
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