相变存储器材料设计与多尺度模拟的研究进展

沈雪阳, 褚瑞轩, 蒋宜辉, 张伟

Progress on Materials Design and Multiscale Simulations for Phase-Change Memory

SHEN Xueyang, CHU Ruixuan, JIANG Yihui, ZHANG Wei

图9 基于Gaussian近似机器学习势的Ge1Sb2Te4合金器件尺度的原子模拟[100]

Fig.9 Device-scale atomistic modeling of Gaussian approximation machine learning potential for ternary Ge1Sb2Te4 alloy[100] (a) 3D crosspoint structure (OTS—ovonic threshold switching) (b) non-isothermal melting process (c) heat dissipation process (T—temperature) (d) changes in the radial distribution function (RDF) upon melt-quench amorphization.