相变存储器材料设计与多尺度模拟的研究进展

沈雪阳, 褚瑞轩, 蒋宜辉, 张伟

Progress on Materials Design and Multiscale Simulations for Phase-Change Memory

SHEN Xueyang, CHU Ruixuan, JIANG Yihui, ZHANG Wei

图4 超快形核Sc0.2Sb2Te3相变合金的设计与器件验证[56]

Fig.4 Design of Sc0.2Sb2Te3 phase-change alloy with ultrafast nucleation rate and device validation[56] (a) structure of rocksalt Sb2Te3 (Ecoh—cohesive energy, a—cell length, the yellow spheres represent the sublattice occupied by Sb atoms and vacancies with a ratio of 2∶1, the blue spheres represent the sublattice occupied by Te atoms) (b) materials screening (CN—coordination number) (c) crystallization process (d) SET speed (GST—Ge2Sb2Te5, SST—Sc0.2Sb2Te3. Inset shows the schematic of the T type phase change device, TEC—top electrode contact, BEC—bottom electrode contact, ϕ—diameter of BEC)