相变存储器材料设计与多尺度模拟的研究进展

沈雪阳, 褚瑞轩, 蒋宜辉, 张伟

Progress on Materials Design and Multiscale Simulations for Phase-Change Memory

SHEN Xueyang, CHU Ruixuan, JIANG Yihui, ZHANG Wei

图2 Ge2Sb2Te5相变合金非晶相的第一性原理分子动力学(AIMD)建模[53,56]

Fig.2 Ab initio molecular dynamic (AIMD) modeling of amorphous Ge2Sb2Te5 phase-change material (a, b) structure factor (a) and ring lengths (b) distribution calculated at 300 K[53] ( Q —scattering vector, S( Q )—X-ray scattering factor, a-GST—amorphous GST, ABAB—ABAB rings, A: Ge/Sb, B: Te) (c) evolution of ABAB rings calculated at about 600 K[56]