p型方钴矿热电材料纳米-介观尺度微结构调控

刘志愿, 王永贵, 赵成玉, 杨婷, 夏爱林

Nano-Mesoscopic Scale Microstructure Regulation for p-Type Skutterudite Thermoelectric Materials

LIU Zhiyuan, WANG Yonggui, ZHAO Chengyu, YANG Ting, XIA Ailin

图3 Co0.95Fe0.05Sb3薄膜的SEM像[49],Co1 - x Fe x Sb3 (0 ≤ x ≤ 0.1)样品的功率因子(S2σ)[49],CoSb3 + 0.72%Ti薄膜的SEM像[42],Ti掺杂的CoSb3薄膜的生长过程示意图[42],纳米结构和Ti基点缺陷的各种声子散射机制[42],不同Ti含量CoSb3薄膜的Seebeck系数和ZT值与温度(T)的依赖关系曲线图[42]

Fig.3 SEM image of Co0.95Fe0.05Sb3 thin film (a)[49], power factor (S2σ) of Co1 - x Fe x Sb3 (0 ≤ x ≤ 0.1) samples (b)[49], SEM image of CoSb3 + 0.72%Ti thin film (c)[42], schematic illustration of Ti doped CoSb3 thin film growth process ((1) nano Ti layer, (2) CoSb3 growing on the Ti layer, (3) annealed film) (d)[42], various phonon scattering mechanisms by nano-strcucture and Ti based points defect (e)[42], and temperature dependences of Seebeck coefficient (f)[42] and ZT values (g)[42] of the CoSb3 thin films with different Ti contents (Samples with Ti contents of 0, 0.25%, 0.57%, 0.72%, 0.83%, and 1.05% were labeled as S0, S1, S2, S3, S4, and S5, respectively)