应变工程中Bi(111)薄膜的半导体-半金属转变及其机理

任师浩, 刘永利, 孟凡顺, 祁阳

Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film

REN Shihao, LIU Yongli, MENG Fanshun, QI Yang

图10 3~5 BL厚Bi(111)薄膜带隙随应变的变化

Fig.10 Variations of energy band gap as a function strain for the Bi(111) films with thickness of 3 BL, 4 BL, and 5 BL