应变工程中Bi(111)薄膜的半导体-半金属转变及其机理

任师浩, 刘永利, 孟凡顺, 祁阳

Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film

REN Shihao, LIU Yongli, MENG Fanshun, QI Yang

图9 2 BL厚Bi(111)薄膜能带结构及带隙随应变的变化

Fig.9 Variations of electronic band structures (a) and direct/indirect energy band gaps (b) change as a function of the strain for 2 BL thickness Bi(111) film