应变工程中Bi(111)薄膜的半导体-半金属转变及其机理
Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film
应变工程中Bi(111)薄膜的半导体-半金属转变及其机理 |
| 任师浩, 刘永利, 孟凡顺, 祁阳 |
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Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film |
| REN Shihao, LIU Yongli, MENG Fanshun, QI Yang |
| 图8 1 BL厚Bi(111)薄膜中电子有效质量与空穴有效质量随应变变化曲线 |
| Fig.8 Variations of effective masses of the electron and hole as a function of strain of 1 BL thickness Bi(111) film (me—electronic quality) |
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