应变工程中Bi(111)薄膜的半导体-半金属转变及其机理

任师浩, 刘永利, 孟凡顺, 祁阳

Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film

REN Shihao, LIU Yongli, MENG Fanshun, QI Yang

图7 1 BL厚Bi(111)薄膜导带边缘态在Γ点能量(ECB-Γ )和在V点能量(ECB-V )随应变变化以及CB-Γ、CB-V处的局域电荷密度分布

Fig.7 Variations of ECB-Γ and ECB-V as a function of strain (a), and local charge density at CB-Γ and CB-V (b) of 1 BL thickness Bi(111) film (CB-Γ—conduction band at Γ,CB-V—conduction band at V, ECB-Γ —energy for the CB-Γ, ECB-V —energy for the CB-V)