应变工程中Bi(111)薄膜的半导体-半金属转变及其机理

任师浩, 刘永利, 孟凡顺, 祁阳

Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film

REN Shihao, LIU Yongli, MENG Fanshun, QI Yang

图5 1 BL厚Bi(111)薄膜直接带隙和间接带隙随应变的变化

Fig.5 Variations of direct and indirect energy band gaps of 1 BL thickness Bi(111) film with different strains