应变工程中Bi(111)薄膜的半导体-半金属转变及其机理 |
| 任师浩, 刘永利, 孟凡顺, 祁阳 |
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Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film |
| REN Shihao, LIU Yongli, MENG Fanshun, QI Yang |
| 图3 施加双轴应变时1 BL厚Bi(111)薄膜能量和结构的变化 |
| Fig.3 Variations of total energy (a), bond length and equilibrium buckling (b) of 1 BL thickness Bi(111) film with different strains |
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