应变工程中Bi(111)薄膜的半导体-半金属转变及其机理

任师浩, 刘永利, 孟凡顺, 祁阳

Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film

REN Shihao, LIU Yongli, MENG Fanshun, QI Yang

图2 1~5 BL厚Bi(111)薄膜的能带结构及带隙

Fig.2 Band structures of 1-5 BL thickness Bi(111) film (a-e), direct and indirect energy band gap curves as a function of the film thickness (f) (E—energy, Ef—Fermi energy)