Fig.8 Interactions between grain boundary and lattice defects
(a, b) full dislocations interact with Σ11(113) grain boundary in Au bicrystals with the emission of stacking faults from the grain boundary[86] (S and D—the pre-existing single- and double-layer GB disconnections, respectively; 1-4—full dislocations; the triangles indicate crystal planes in two neighboring grains) (c-e) atomistic mechanism of dislocation core decomposition at grain boundaries[86] (The yellow and white rhombus delineate the C type structure units on the flat GB and at the disconnection core, respectively; the purple and red irregular rhombus indicate the distorted atom columns induced by the long-range stress field and the core of the incoming dislocation, respectively) (f, g) interaction and coordinated deformation between Σ11(113) grain boundary and nanotwins in Au[86] (The purple arrows indicate the moving direction of a disconnection D; the cyan arrow delineates the rotation of the twin-GB intersection facets; the numbers in each snapshot indicate the distance (in the context of d113) of the right GB segment from the reference point) (h) dislocation transmission across LAGB in SrTiO3 (STO)[87] (The green and red arrows indicate the grain boundary position and the dislocation that impeded on the grain boundary plane, respectively)
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