抗辐照损伤金属基纳米结构材料界面设计及其响应行为的研究进展
刘悦1(), 汤鹏正1, 杨昆明1, 沈一鸣2, 吴中光2, 范同祥1()
Research Progress on the Interface Design and Interface Response of Irradiation Resistant Metal-Based Nanostructured Materials
LIU Yue1(), TANG Pengzheng1, YANG Kunming1, SHEN Yiming2, WU Zhongguang2, FAN Tongxiang1()

图8. 半共格异质界面失配位错序列设计[74,78]
(a, b) the MDIs in Cu/Nb and Cu/V interfaces (The dashed lines indicate interface misfit dislocations)[74]
(c) the black dots present the areal densities of MDIs calculated by O-lattice theory for a range of fcc/bcc pairs with different lattice parameter ratios, but identical interface crystallography (Kurdjumov-Sachs orientation relation and closest-packed interface planes); the red diamonds are critical He concentrations measured to detect He bubbles in TEM; and the dashed line is a visual guide[74] (d-i) plan-view images of He channels[78] (d-g) underfocused plan-view TEM micrographs (400-nm underfocus) of the V/Cu/V trilayer after He implantation to fluences of 1×1015 ions/cm2 (d), 3×1015 ions/cm2 (e), 5×1015 ions/cm2 (f), and 1×1016 ions/cm2 (g) (h, i) an isolated precipitate from a sample implanted to 3×1015 ions/cm2 appears bright in underfocus (h) and dark in overfocus (i) imaging conditions (400-nm overfocus), confirming that it is an elongated, He filled cavity

Fig.8. Design of interfacial misfit intersections (MDIs) at the semi-coherent interfaces