图7. 半共格异质界面与辐照缺陷的相互作用^[10,63,68]
(a-d) in situ observation of dislocation loops absorbed by layer interface over a dose range of 0.131-0.133 dpa (0.262×10¹⁴-0.266×10¹⁴ ions/cm²)^[10]
(e) schematic of interaction between two coaxial dislocation loops with opposite Burgers vectors^[10] (f-h) simulations of 1.5 keV collision cascades in Cu/Nb multilayer composite (f), perfect crystalline fcc copper (g), and perfect crystalline bcc niobium (h)^[63] (i, j) interface stress enhancing the sink strength of layer interfaces: Migration paths and local concentrations of vacancies (i) and interstitials (j) on the Ag side of the semi-coherent Ag-Cu interface^[68] (k, l) enhancement in sink strength of semi-coherent Ag-Cu interfaces for vacancies (k) and interstitials (l) in Cu are plotted as functions of layer thickness (k_{\mathrm{v}}^{\mathrm{2}} and k_{\mathrm{i}}^{\mathrm{2}} are the sink strengths for vacancies and interstitials, respectively, d₁—layer thickness)^[68]

Fig.7. Interaction between the semi-coherent interfaces and the irradiation-induced defects