图5. 大角度晶界设计及界面与缺陷的相互作用^[8,13,51]
(a) defects near a triple junction in polycrystalline Cu irradiated at 450^oC by 200 keV He ions with fluence of 2×10¹⁷ ions/cm² (The inset is the corresponding electron backscatter diffraction (EBSD) image)^[13]
(b) the determination of void-denuded zones (VDZ) for one grain boundary (GB) with 49°. All images were taken under a defocus of -5 μm^[13] (λ—VDZ width)
(c) VDZ width as a function of misorientation for non-CTB ∑3 and ∑3 GBs^[13] (d-k) in situ evidence of absorption of individual loops or a dislocation segment by GBs of nanocrystalline Ni^[51] (l-q) selected snapshots of damage self-healing near the GB from temperature accelerated dynamics (TAD) simulations. The symbols are defined as follows: larger green spheres, interstitials; red cubes, vacancies; smaller blue spheres, atoms that move more than 1 nm during an event (between the frames immediately before and after); purple vectors, the moving directions and distances of moving atoms (E_a—activation barriers)^[8] (l) after 21.3 ns, the five vacancies below the GB form a cluster (m, n) at 23.0 ns, three interstitials emit from the GB with a barrier of 0.17 eV to annihilate three vacancies. Note that Fig.5m shows how atoms move during this transition, and Fig.5n shows the final configuration after the event is completed (o, p) configurations before and after the last interstitial emission event at 23.8 ns (q) at 348.0 ns, the two vacancies above the GB diffuse to the GB via the slower conventional hopping mechanism

Fig.5. Design of high angle grain boundary and its interaction with the defects