图3. 激光分子束外延-扫描隧道显微镜(STM)高通量制备与表征系统^[26]

Fig.3. High-throughput preparation and characterization system of laser molecular beam epitaxy-scanning tunneling microscopy (STM)^[26]
(a) experimental equipment for high-throughput preparation and characterization
(b) schematic of high-throughput preparation for combinatorial film chip
(c) in-situ STM photograph of Fe-based superconducting film prepared by high-throughput technology
(d) micro-area resistance of combinatorial film chip with gradient thickness (28 nm→280 nm, T—temperature)
(e) XRD spectra of combinatorial film chip with gradient deposition temperature T_s (350 ℃→600 ℃)
(f) micro-area temperature dependence of resistance R(T) for combinatorial film chip with gradient superconducting transition temperature