外延膜的高分辨X射线衍射分析
李长记1,邹敏杰1,2,张磊1(
),王元明1(),王甦程1
),王元明1(),王甦程1
High-Resolution X-Ray Diffraction Analysis of Epitaxial Films
LI Changji1,ZOU Minjie1,2,ZHANG Lei1(),WANG Yuanming1(),WANG Sucheng1
),WANG Yuanming1(),WANG Sucheng1
图7. 立方Si1-xGex/Si外延膜(Layer)和衬底(Substrate)(004)面和(224)面衍射强度和
Fig.7. HRXRD profiles for symmetric (004) reflection (a) and asymmetric (224) reflection (b) of the cubic Si1-xGex/Si epitaxial structure (F1 and F2 in the figure are Laue oscillation peaks which can be used to calculate the thickness of epitaxial film. The inset shows the epitaxial structure where the substrate is Si with surface normal of [001] and the epitaxial film is Si1-xGex with nominal composition x=0.1 for Ge)
