金属诱导晶化基础与应用研究进展
王祖敏1(
),张安1,陈媛媛1,黄远1,王江涌2
),张安1,陈媛媛1,黄远1,王江涌2
Research Progress on Fundamentals and Applications of Metal-Induced Crystallization
WANG Zumin1(),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2
),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2
图8. 150 nm非晶Si/100 nm Al双层膜在220和240 ℃退火时形核的晶体Si晶粒在Al底层横向生长的原位价带能量过滤式透射电子显微镜观察，及膜层交换的发生：Al亚层和Si亚层在280 ℃退火时交换了相互位置[
Fig.8. In situ valence energy-filtered TEM observations of the lateral growth of a c-Si grain nucleated at the c-Al bottom layer during heating of a 150-nm a-Si/100-nm c-Al bilayer at 220 ℃ (a) and 240 ℃ (b), respectively, and upon heating at 280 ℃, Al and Si sublayers have exchanged their locations: a layer exchange has occurred (c)[
