金属诱导晶化基础与应用研究进展
王祖敏1(
),张安1,陈媛媛1,黄远1,王江涌2
),张安1,陈媛媛1,黄远1,王江涌2
Research Progress on Fundamentals and Applications of Metal-Induced Crystallization
WANG Zumin1(),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2
),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2
图7. 晶体Si或晶体Ge在Al晶界处初始形核完成后继续浸润晶界的界面热力学分析，及晶体Ge和晶体Si晶粒在原始Al层中(垂直于原始Al的晶界方向)连续横向生长的界面热力学临界厚度(hcrit)分析[
Fig.7. Energetics of the continued wetting after completing the initial nucleation of crystalline Si or crystalline Ge at the Al GBs (a), and energetics for continued lateral grain growth of c-Ge and c-Si in the original Al layer (perpendicular to the original Al GBs) (b) (hcrit represents the critical thickness of the amorphous semiconductor)[
