图6. 非晶SiGe在晶体Al/非晶SiGe界面和Al晶界处晶化时的界面能(γ')、体结晶能(ΔG)和形核临界厚度(h_{\mathrm{i}\mathrm{n}\text{??}\mathrm{G}\mathrm{B}\text{?}}^{\mathrm{c}\mathrm{r}\mathrm{i}\mathrm{t}}、h_{\mathrm{i}\mathrm{n}\mathrm{t}\mathrm{e}\mathrm{r}\mathrm{f}\text{?}}^{\mathrm{c}\mathrm{r}\mathrm{i}\mathrm{t}})的界面热力学分析，在临界温度(约320 ℃)下晶体SiGe在晶体Al/非晶SiGe界面处发生晶化过程的示意图，及沉积态与不同温度(250~400 ℃)退火态的晶体Al/非晶SiGe样品的XRD谱^[55]

Fig.6. Calculated interface energies (γ') (a), bulk crystallization energies (ΔG) (b) and critical thicknesses for nucleation of crystallization (h_{\mathrm{i}\mathrm{n}\text{?}\mathrm{G}\mathrm{B}}^{\mathrm{c}\mathrm{r}\mathrm{i}\mathrm{t}}\text{,}\text{?}{h}_{\mathrm{i}\mathrm{n}\mathrm{t}\mathrm{e}\mathrm{r}\mathrm{f}}^{\mathrm{c}\mathrm{r}\mathrm{i}\mathrm{t}}) (c) of amorphous SiGe at the <Al>|{SiGe} interface and at the <Al> GBs, schematic illustration of crystallization processes at a temperature below (panel I) or above (panel II) the critical temperature (about 320 ℃) for nucleation of <SiGe> at the <Al>|{SiGe} interface (d), and XRD spectra of the c-Al/a-SiGe samples as-deposited and annealed at different temperatures from 250 ℃ to 400 ℃ (e)^[55]