金属诱导晶化基础与应用研究进展
王祖敏1(
),张安1,陈媛媛1,黄远1,王江涌2
),张安1,陈媛媛1,黄远1,王江涌2
Research Progress on Fundamentals and Applications of Metal-Induced Crystallization
WANG Zumin1(),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2
),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2
图3. 非晶半导体在不同形核位点进行低温结晶的示意图，晶体Ge (或Si)在Al晶界和Al/非晶Ge (或者Al/非晶Si)界面处形核的界面热力学分析，及晶体Si在Ag晶界、Au晶界、Ag/非晶Si以及Au/非晶Si界面处形核的界面热力学分析[
Fig.3. Schematic illustration of the two types of sites for low-temperature nucleation of crystallization of amorphous semiconductors (a), energetics of the nucleation of crystalline Ge (or Si) at the Al GBs and at the c-Al/a-Ge (or c-Al/a-Si) interface (b), and energetics of the nucleation of crystalline Si at Ag GBs and Au GBs and at the c-Ag/a-Si and the c-Au/a-Si interfaces (c)[
