金属诱导晶化基础与应用研究进展
王祖敏1(),张安1,陈媛媛1,黄远1,王江涌2
Research Progress on Fundamentals and Applications of Metal-Induced Crystallization
WANG Zumin1(),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2

图4. 150 ℃退火处理的100 nm晶体Al/150 nm非晶Si双层膜中晶体Si在大角度Al晶界处形核过程的原位加热高分辨透射电子显微镜观察(截面方向)[33]

Fig.4. In situ heating HRTEM observations (cross-sectional views) of the nucleation of crystalline Si at a high-angle Al GB at 150 ℃, in a 100-nm c-Al/150-nm a-Si bilayer (d—lattice spacing)[33](a) before nucleation of c-Si (0 s)(b, c) initial nucleation and growth of Si crystal nucleus at the Al GB (120 s and 210 s at 150 ℃), respectively