金属诱导晶化基础与应用研究进展
王祖敏1(),张安1,陈媛媛1,黄远1,王江涌2
Research Progress on Fundamentals and Applications of Metal-Induced Crystallization
WANG Zumin1(),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2

图2. 100 nm Al/150 nm非晶Si双层膜退火期间非晶Si浸润金属Al晶界过程的原位加热价带能量过滤式透射电子显微镜观测[33]

Fig.2. In situ heating valence energy-filtered TEM observations of wetting of an Al GB by a-Si of 100-nm c-Al/150-nm a-Si bilayer during annealing (c-Al means crystalline-Al)[33](a) bright-field TEM image of the cross section, and mappings of plasmon-loss peak energy and full width at half maximum (FWHM) of the bilayer specimen upon in situ annealing at 110 ℃ for 15 min(b~d) mappings of the plasmon-loss peak energy and FWHM of the bilayer specimen upon annealing at 120, 130 and 140 ℃, respectively