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金属诱导晶化基础与应用研究进展
王祖敏1(),张安1,陈媛媛1,黄远1,王江涌2
Research Progress on Fundamentals and Applications of Metal-Induced Crystallization
WANG Zumin1(),ZHANG An1,CHEN Yuanyuan1,HUANG Yuan1,WANG Jiangyong2

图1. 非晶半导体材料浸润金属晶界的示意图[30]，及非晶Si和非晶Ge半导体浸润大角度Al晶界的界面热力学分析、非晶Si浸润大角度Ag和Au晶界的界面热力学分析[27]

Fig.1. Schematic illustration of the wetting of a metal grain boundary (GB) by an amorphous semiconductor material (a)[30], energetics for wetting of high-angle <Al> grain boundaries by a-Ge and a-Si (b), and energetics for wetting of high-angle <Ag> and <Au> grain boundaries by a-Si (c)[27] (γGB?M? represents the GB energies of metal <M> high-angle GBs, γ?M?|{S} represents the interface energies between <M> and amorphous semiconductor {S}, a-Si means amorphous Si)