0.8PbTiO3-0.2Bi(Mg0.5Ti0.5)O3铁电薄膜90°分步畴转与温度效应
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PFM Study of the 90° Step-by-Step Domain Switching and the Temperature Effect in 0.8PbTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ferroelectric Thin Film
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图4. 在5 V直流偏压作用下电畴翻转速率随温度的变化 |
Fig.4. The c- domain area portion dependence on scanning time at 28 and 70 ℃ at the tip bias voltage of 5 V |
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