Nd含量对磁控溅射Si(111)/Cr/Nd-Co/Cr薄膜结构与磁性的影响
何贤美1,童六牛2(
),高成2,王毅超2
),高成2,王毅超2
Effect of Nd Content on the Structure and Magnetic Properties of Si(111)/Cr/Nd-Co/Cr Thin Films Prepared by Magnetron Sputtering
HE Xianmei1,TONG Liuniu2(),GAO Cheng2,WANG Yichao2
),GAO Cheng2,WANG Yichao2
图10. 经600 ℃快速退火30 min后Si(111)/Cr(10 nm)/NdCox(400 nm)/Cr(10 nm)薄膜的室温磁滞回线
Fig.10. Magnetic hysteresis loops of the post RTA annealed Si(111)/Cr(10 nm)/NdCox(400 nm)/Cr(10 nm) films with x=2.5 (a), 3.8 (b), 5.2 (c) and 7.2 (d), respectively, where the magnetic field is parallel and perpendicular to the film plane at room temperature, respectively. The films were annealed at 600 ℃ for 30 min in a RTA system
