Nd含量对磁控溅射Si(111)/Cr/Nd-Co/Cr薄膜结构与磁性的影响
何贤美1,童六牛2(
),高成2,王毅超2
),高成2,王毅超2
Effect of Nd Content on the Structure and Magnetic Properties of Si(111)/Cr/Nd-Co/Cr Thin Films Prepared by Magnetron Sputtering
HE Xianmei1,TONG Liuniu2(),GAO Cheng2,WANG Yichao2
),GAO Cheng2,WANG Yichao2
图8. 制备态Si(111)/Cr(10 nm)/NdCo5.2 (400 nm)/Cr(10 nm)薄膜分别经过在不同退火温度(Ta)真空退火后的面内磁滞回线，及面内矫顽力(Hc-in)和剩磁比(Mr/Ms)随Ta的变化关系
Fig.8. In-plane hysteresis loops of the as-deposited and subsequently annealed Si(111)/Cr(10 nm)/NdCo5.2 (400 nm)/Cr(10 nm) films at annealing temperatures Ta=300, 400, 500 and 600 ℃, respectively (Inset shows Ta dependence of the in-plane coercivity (Hc-in) and remanence ratio (Mr/Ms), respectively)
