Nd含量对磁控溅射Si(111)/Cr/Nd-Co/Cr薄膜结构与磁性的影响
何贤美1,童六牛2(
),高成2,王毅超2
),高成2,王毅超2
Effect of Nd Content on the Structure and Magnetic Properties of Si(111)/Cr/Nd-Co/Cr Thin Films Prepared by Magnetron Sputtering
HE Xianmei1,TONG Liuniu2(),GAO Cheng2,WANG Yichao2
),GAO Cheng2,WANG Yichao2
图3. 制备态Si(111)/Cr(10 nm)/NdCox(400 nm)/Cr(10 nm)薄膜的饱和磁化强度(Ms)和平面内饱和磁化场(Hs-in)，及有效磁各向异性能(Keff)、形状各向异性能(Kd)和磁弹性各向异性能(Kme)随x的变化
Fig.3. Saturation magnetization and in-plane saturation magnetic field (Hs-in) (a), and effective magnetic anisotropy energy (Keff), shape anisotropy energy (Kd) and magneto-elastic anisotropy energy (Kme) (b) of the as-deposited Si(111)/Cr(10 nm)/NdCox(400 nm)/Cr(10 nm) thin films with x=2.5~7.2
