The semiconductor properties of the passive film on Ni201 formed by anodic passivation in pH=8.4 buffer solution and the oxide film on Ni201 formed by thermally grown in air at 500 ℃ were investigated by photoelectrochemical response and Mott–Schottky response analysis. The Mott–Schottky plots for both the passive film and the thermal oxide film on Ni201 demonstrated that the two films exhibited p–type semiconductors with different values of flat band potential: 0.40 V for the passive film and 0.15 V for the thermally grown NiO. The photocurrent spectra of the passive film on Ni201 were derived into two peaks for inner NiO and outer Ni(OH)2 layers, respectively. The band gap energy Eg for the inner NiO was 2.8 eV and the Eg for outer Ni(OH)2 was 1.6 eV, respectively. The Eg of the inner NiO of the passive film on Ni201 (2.8 eV) was closed to that of the thermally grown oxide of Ni201 (2.4 eV), indicating that the inner NiO in the passive film is crystalline structure. An electronic energy band model of both p–type semiconductors of inner NiO and outer Ni(OH)2 layers was proposed to explain the photocurrent and Mott–Schottky plots for the passive film on Ni201.
TAN Yu
,
LIANG Ke-Xin
,
ZHANG Qing-Han
. SEMICONDUCTOR PROPERTIES OF THE PASSIVE FILM FORMED ON Ni201 IN NEUTRAL SOLUTION[J]. Acta Metall Sin, 2012
, 48(8)
: 971
-976
.
DOI: 10.3724/SP.J.1037.2011.00765
[1] Sato N. Corros Sci, 2000; 42: 1957
[2] Da C B M, Rondot B, Compere C, Montemor M F, Sim˜oes A M P, Ferreira M G S. Corros Sci, 1998; 40: 481
[3] Schmuki P, Bohni H. J Electrochem Soc, 1992; 139: 1908
[4] Kang J Q, Yang Y F, Jiang X, Shao H X. Corros Sci, 2008; 50: 3576
[5] Sato N. Corros Eng, 2005; 54: 92
(佐藤教男. 材料と环境, 2005; 54: 92)
[6] Hamadou L, Kadri A, Benbrahim N. J Electrochem Soc,2007; 154: 291
[7] Rangel C M, Silva T M, Belo M D. Electrochim Acta, 2005;50: 5076
[8] Cheng Y F, Luo J L. Electrochim Acta, 1999; 44: 2947
[9] Schmuki P, Bohni H. J Electrochem Soc, 1992; 139: 1908
[10] Sikora E, Macdonald D D. Electrochim Acta, 2002; 48: 69
[11] Darowicki K, Krakowiak S, Slepski P. Electrochim Acta, 2006; 51: 2204
[12] Belo M D, Hakiki N E, Ferreira M G S. Electrochim Acta, 1999; 44: 2473
[13] Hakiki N E, Belo M D, Sim˜oes A M P, Ferreira M G S. J Electrochem Soc, 1998; 145: 3821
[14] Kim J, Cho E, Kwon H. Corros Sci, 2001; 43: 1403
[15] Sunseri C, Piazza S, Quarto F D. J Electrochem Soc, 1990; 137: 2411
[16] Quarto F D, Piazza S, Sunseri C. Corros Sci, 1990; 31: 721
[17] Searson P C, Latanision R M. Electrochim Acta, 1990; 35: 445
[18] Kim J, Cho E, Kwon H. Electrochim Acta, 2001; 47: 415
[19] Fujimoto S, Tsuchiya H, Sakamoto M, Shibata T, Asami K. In: Cahay M, Jensen K L, Mumford P D, Binh V T, Holland C, Lee J D eds., Proc 201st Meeting of the Electrochemical
Society, Philadelphia, Pennsylvania, 12–17 May, 2002: 278
[20] Sunseri C, Piazza S, Di Q F. Mater Sci Forum, 1995; 185–188: 435
[21] Wilhelm S M, Hackerman N. J Electrochem Soc, 1981; 128: 1668
[22] Zhang S H, Tan Y, Liang K X. Acta Metall Sin, 2011; 47: 1147
(张胜寒, 檀玉, 梁可心. 金属学报, 2011; 47: 1147)
[23] Scherer J, Ocko B M, Magnussen O M. Electrochim Acta, 2003; 48: 1169
[24] Searson P C, Latanision R M. J Electrochem Soc, 1988; 135: 1358
[25] Tsuchiya H, Fujimoto S, Chihara O, Shibata T. Electrochim Acta, 2002; 47: 4357
