Development of Solid-Liquid Interfacial Energyof Melt-Crystal

doi:10.11900/0412.1961.2017.00565

Acta Metall Sin

2018, Vol. 54

Issue (5): 766-772 DOI: 10.11900/0412.1961.2017.00565

Special Issue for the Solidification of Metallic Materials

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Development of Solid-Liquid Interfacial Energyof Melt-Crystal

Zengyun JIAN(

), Tao XU, Junfeng XU, Man ZHU, Fang'e CHANG

Shaanxi Province Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an 710021, China

Cite this article:

Zengyun JIAN, Tao XU, Junfeng XU, Man ZHU, Fang'e CHANG. Development of Solid-Liquid Interfacial Energyof Melt-Crystal. Acta Metall Sin, 2018, 54(5): 766-772.

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Abstract

Solid-liquid interfacial energy (SLIE) plays a crucial role in accurately evaluating solidification characteristics and effectively tuning the solidification process of crystals, which determines the structures and properties of crystals. This paper is based on the investigations of the authors on SLIE of melt-crystal in the past decade, and concentrates on reviewing the recent developments on the experimental and theoretical results of SLIE of melt-crystal. It draws several important conclusions by comparing various experimental results of SLIE under different temperatures. Firstly, the SLIE of melt-crystal decreases with the decrease of temperature. Secondly, the reason for different SLIE respectively obtained by Spaepen model and experimental measurement is revealed. Eventually, a model and method based on the structure of the solid-liquid interface for predicting the SLIE are proposed, and the results provided by this model are in line with the experimental results and the simulated results at the melting temperature, as well as the experimental results and the simulated results of the undercooled state.

Key words: solid-liquid interface interfacial energy undercooling metal facet

Received: 02 January 2018

ZTFLH:

TG111.4

Fund: Supported by National Natural Science Foundation of China (Nos.51371133 and 51671151)

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	Zengyun JIAN
	Tao XU
	Junfeng XU
	Man ZHU
	Fang'e CHANG

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https://www.ams.org.cn/EN/10.11900/0412.1961.2017.00565 OR https://www.ams.org.cn/EN/Y2018/V54/I5/766

Fig.1 Dependence of the homogenous nucleation undercooling (ΔT_V) on the ratio of sample volume (V) to the cooling rate (R_c) for Ag (a), Cu (b) and Ni (c) (MU—maximum nucleation undercoolings, HU—homogeneous nucleation undercoolings, σ^T—solid-liquid interfacial energy of melt-crystal)^[37]

Fig.2 Dependence of the crystal-melt interfacial energy on the temperature (T) for Ag (a), Cu (b) and Ni (c) (DA—dihedral angle, CA—contact angle)^[37]

Table 1 Dependence of the solid-liquid interface energy on temperature for Ag, Cu and Ni

Fig.3 Dependences of the solid-liquid interface energy on temperature for silicon predicted from ΔT^* (the critical undercooling (CU) for Si growing from lateral mode to intermediary mode) and ΔT^** (The CU for Si growing from intermediary mode to continuous mode) (☆ result obtained from HU method, ◇ result obtained from grain boundary groove (GBG) method)^[34]

Fig.4 Dependences of the predicted interface energies between silicon crystal and Si-Al melt with the equilibrium composition at the liquidus temperature on the mole fraction of silicon (X_Si) in the melt according to ΔT^*=131 K and ΔT^**=239 K obtained in Si-20%Al (atomic fraction) alloy (◇ is the result obtained from the GBG method; △ and ▽ are results obtained from the CU method in terms of ΔT^*=100 K and ΔT^**=210 K obtained in pure silicon, respectively)^[35]

Fig.5 Dependences of the predicted interface energies between silicon crystal and Si-Al melt with optional composition at the temperature of 850 K on the X_Si in the melt according to ΔT^*=131 K and ΔT^**=239 K obtained in Si-20%Al (atomic fraction) alloy (◇ is the result obtained from the GBG method; △ and ▽ are results obtained from the CU method in terms of ΔT^*=100 K and ΔT^**=210 K obtained in pure silicon, respectively)^[35]

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