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Acta Metall Sin  2013, Vol. 49 Issue (11): 1303-1310    DOI: 10.3724/SP.J.1037.2013.00527
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OXIDATION BEHAVIOR OF IN SITU SYNTHESIZED MoSi2-SiC COMPOSITES AT 500℃
ZHANG Laiqi, PAN Kunming, DUAN Lihui, LIN Junpin
State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing, Beijing 100083
Cite this article: 

ZHANG Laiqi, PAN Kunming, DUAN Lihui, LIN Junpin. OXIDATION BEHAVIOR OF IN SITU SYNTHESIZED MoSi2-SiC COMPOSITES AT 500℃. Acta Metall Sin, 2013, 49(11): 1303-1310.

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Abstract  

The oxidation behavior for in situ synthesized MoSi2-SiC composites with different SiC volume fraction at 500℃ was investigated. The results of oxidation for 1000 h indicate that the oxidation resistance for composites is significantly higher than that of monolithic MoSi2, MoSi2-30%SiC composite in situ synthesized possesses higher oxidation resistance compared with the traditional composite which is fabricated by hot-pressing the mixture of commercial powders of MoSi2 and SiC. After oxidation for 1000 h, the composites have not been observed to disintegrate (pest). The oxidation kinetics curves are divided into three stages: incubation period, rapid oxidation period and the steady-state. The oxide scale consists of MoO3, amorphous silica and β-SiC, therefore, the oxidation of the materials is mainly done between MoSi2 and O2, and SiC is not oxidized. The surface morphology observations of samples oxidized for 5, 10 and 20 h show that the phase boundary is the preferential oxidation site, the oxides formed at the initial stage of oxidation are irregular-shaped, and MoO3 whisker and oxide cluster mainly composed of amorphous SiO2 come gradually into being along with the development of oxidization. It is also found that the nucleation and growth of MoO3 whisker preferentially take place at the concave and convex sites of substrate surfaces.

Key words:  in situ synthesized      MoSi2-SiC composite      oxidation behavior      pest     
Received:  29 August 2013     

URL: 

https://www.ams.org.cn/EN/10.3724/SP.J.1037.2013.00527     OR     https://www.ams.org.cn/EN/Y2013/V49/I11/1303

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