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金属学报  1997, Vol. 33 Issue (6): 667-672    
  论文 本期目录 | 过刊浏览 |
用临界钝化电流法和液晶法检测金属氧化物膜的缺陷率
印仁和;曹为民;李亚君;李卓棠;荣国斌
上海大学;上海;201800;上海大学;上海;201800;上海大学;上海;201800;上海大学;上海;201800;华东理工大学;上海;200237
THE INSPECTION OF DEFECTS IN METAL OXIDE FILMS BY CPCD AND LIQUID CRYSTAL METHODS
YIN Renhe; CAO Weimin; LI Yajun(The Electrochemical Research Center; ShanghaiUniversity; Shanghai 201800) LI Zhuotang (Deportment of Materials; Shanghai University)) RONG Guobin (East China University of Science and Technology)
引用本文:

印仁和;曹为民;李亚君;李卓棠;荣国斌. 用临界钝化电流法和液晶法检测金属氧化物膜的缺陷率[J]. 金属学报, 1997, 33(6): 667-672.
, , , , . THE INSPECTION OF DEFECTS IN METAL OXIDE FILMS BY CPCD AND LIQUID CRYSTAL METHODS[J]. Acta Metall Sin, 1997, 33(6): 667-672.

全文: PDF(1212 KB)  
摘要: 用临界钝化电流(CriticalPassivationCurrentDensity.CPCD)法和液晶法,研究了不锈钢上Ta2O5,ZrO2的高频溅射膜的缺陷率建立了CPCD法中与薄膜有关的电流密度If与膜厚d之间的关系式:If=k(1-θ)d.利用液晶的动态散射模型(DynamicScatteringMode,DSM),建立了动态无损伤检测膜缺陷率的新方法,并证明了这两种方法的检测结果有良好的直线关系。
关键词 临界钝化电流密度法动态散射模型液晶氧化物薄膜缺陷率    
Abstract:The defects in Ta2O5 and ZrO2 films prepared by RF sputtering on SUS304stainless steel were studied by CPCD (critical passivation current density) and liquid crystalmethods. In CPCD method a relation between current density if and film thickness wasgiven: If= K(1-0)d. Using DSM (dynamic scattering mode) of liquid crystal, a new methodabout nondestructive testing of film defects was reported. The results of the two methodsshowed a good linear relation.
Key wordsCPCD method    DSM    liquid crystal    oxide film    defect
收稿日期: 1997-06-18     
基金资助:国家自然科学基金!59471060
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