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金属学报  1993, Vol. 29 Issue (1): 87-92    
  论文 本期目录 | 过刊浏览 |
等离子体化学气相沉积Ti-N-C膜的研究
赵程;彭红瑞;李世直
青岛化工学院;青岛化工学院;青岛化工学院
PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS
ZHAO Cheng;PENG Hongrui;LI Shizhi Qingdao Institute of Chemical Technology
引用本文:

赵程;彭红瑞;李世直. 等离子体化学气相沉积Ti-N-C膜的研究[J]. 金属学报, 1993, 29(1): 87-92.
, , . PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS[J]. Acta Metall Sin, 1993, 29(1): 87-92.

全文: PDF(962 KB)  
摘要: 用XPS,AES,XRD,SEM及显微硬度计分析和测试了不同成分的等离子体化学气相沉积(PCVD)Ti—N—C膜,并与PCVD一TiN膜比较。认为:Ti—N—C膜优异的耐磨性可归因于高显微硬度及致密的结构。AES及XPS分析结果表明,Ti—N—C与TiN膜表面吸附的氧原子价态不同,其决定因素是膜晶格中是否有足够的碳原子存在。氧吸附态的不同可能导致不同的磨损失效方式。
关键词 等离子体化学气相沉积(PCVD)Ti-N-C膜TiN膜    
Abstract:Plasma chemical vapour deposited (PCVD) Ti-N-C films with different Cand N contents were examined, in comparison with C-free ones, by XPS, AES, XRD, SEMand microhardness testing. The PCVD Ti-N-C film may attribute its superior wear resist-ance to its high microhardness and dense structure. The variety of valence state of oxygenatoms adsorbed on Ti-N-C or TiN film surface was detected by AES and XPS analyses.Whether or not sufficient C atoms, existing in the lattice of the films seems to be decisive. Dif-ferent states of oxygen adsorbed may cause different modes of abrasive damage of film.
Key wordsplasma chemical vapour deposition    Ti-N-C film    TiN film
收稿日期: 1993-01-18     
基金资助:国家自然科学基金
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