双脉冲磁控溅射峰值靶电流密度对TiN薄膜结构与力学性能的影响

doi:10.11900/0412.1961.2017.00406

金属学报

2018, Vol. 54

Issue (6): 927-934 DOI: 10.11900/0412.1961.2017.00406

本期目录 | 过刊浏览

双脉冲磁控溅射峰值靶电流密度对TiN薄膜结构与力学性能的影响

时惠英, 杨超(

), 蒋百灵, 黄蓓, 王迪

西安理工大学材料科学与工程学院西安 710048

Influences of Target Peak Current Density on the Microstructure and Mechanical Properties of TiN Films Deposited by Dual Pulsed Power Magnetron Sputtering

Huiying SHI, Chao YANG(

), Bailing JIANG, Bei HUANG, Di WANG

School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China

引用本文:

时惠英, 杨超, 蒋百灵, 黄蓓, 王迪. 双脉冲磁控溅射峰值靶电流密度对TiN薄膜结构与力学性能的影响[J]. 金属学报, 2018, 54(6): 927-934.
Huiying SHI, Chao YANG, Bailing JIANG, Bei HUANG, Di WANG. Influences of Target Peak Current Density on the Microstructure and Mechanical Properties of TiN Films Deposited by Dual Pulsed Power Magnetron Sputtering[J]. Acta Metall Sin, 2018, 54(6): 927-934.

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摘要:

自主研发了双脉冲磁控溅射技术,提出在一个脉冲周期内电流呈阶梯式上升的双脉冲电场设计理念,通过对2个脉冲阶段持续时间和峰值靶电流密度的调配,既满足提高镀料粒子动能与离化率以制备高性能薄膜的工艺要求,又达到增加脉冲持续时间以提高薄膜沉积速率的效能目标。采用双脉冲磁控溅射技术,在后期脉冲阶段的不同峰值靶电流密度下制备4组TiN薄膜,研究了峰值靶电流密度对薄膜微观结构和力学性能的影响。结果表明,将峰值靶电流密度提高至0.87 A/cm²时,所制备的TiN薄膜呈现出颗粒细小且致密的组织,平均晶粒尺寸为17 nm。同时,薄膜的显微硬度和膜基结合力可分别达29.5 GPa和30.0 N。

关键词 ： TiN薄膜, 双脉冲磁控溅射技术, 双脉冲电场, 峰值靶电流密度, 力学性能

Abstract：

The low kinetic energy and low ionization rate of deposited particle of traditional magnetron sputtering led to low density and poor adhesion of TiN film. The peak current density between cathodic target and anodic chamber was increased several times through the adoption of pulsed power supply mode with low duty cycle, which further enhanced kinetic energy and ionization rate of deposited particle. But the average deposition rate of thin film was significantly reduced. Therefore, a design concept of dual pulsed electric field mode was proposed, which allowed to adjust duration time and target peak current density of the dual pulses. It not only enhanced kinetic energy and ionization rate of deposited particle to satisfy the demand of fabrication of high performance film, but also increased the duration time of pulse to achieve high average deposition rate. In the manuscript, TiN films were deposited by dual pulsed power magnetron sputtering with different target peak current densities of the second pulse stage. The microstructure and mechanical properties of TiN films were characterized using XRD, SEM, nanoindentation and microscratch test. It was found that the TiN film deposited under target peak current density of 0.87 A/cm² exhibited finely dense microstructure with average grain size of 17 nm. Additionally, the hardness and film-substrate adhesion of such film were as high as 29.5 GPa and 30.0 N, respectively.

Key words： TiN film dual pulsed power magnetron sputtering dual pulsed electric field target peak current density mechanical property

收稿日期: 2017-09-25

ZTFLH:

TG43

基金资助:国家自然科学基金项目No.51571114

作者简介:

作者简介时惠英,女,1959年生,教授

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https://www.ams.org.cn/CN/10.11900/0412.1961.2017.00406 或 https://www.ams.org.cn/CN/Y2018/V54/I6/927

图1 双脉冲磁控溅射系统示意图和双脉冲电场电流波形图

表1 不同峰值靶电流密度下制备TiN薄膜的工艺参数

图2 TiN薄膜的表面和截面形貌的SEM像

图3 TiN薄膜的平均和实际沉积速率

图4 TiN薄膜的XRD谱

表2 TiN薄膜的力学性能、N/Ti原子比和临界载荷

图5 TiN薄膜划痕形貌的OM像

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