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金属学报  2017, Vol. 53 Issue (1): 70-76    DOI: 10.11900/0412.1961.2016.00266
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多能氦离子注入对W金属微结构的影响
王康1,邓爱红1(),龚敏1,卢晓波1,张元元1,刘翔2
1 四川大学物理科学与技术学院 成都 610064
2 核工业西南物理研究院 成都 610041
Effect on Microstructure of Tungsten Under Helium Ions Irradiation with Multiple Energy
Kang WANG1,Aihong DENG1(),Min GONG1,Xiaobo LU1,Yuanyuan ZHANG1,Xiang LIU2
1 College of Physical Science and Technology, Sichuan University, Chengdu 610064, China
2 Southwestern Institute of Physics, Chengdu 610041, China
引用本文:

王康,邓爱红,龚敏,卢晓波,张元元,刘翔. 多能氦离子注入对W金属微结构的影响[J]. 金属学报, 2017, 53(1): 70-76.
Kang WANG, Aihong DENG, Min GONG, Xiaobo LU, Yuanyuan ZHANG, Xiang LIU. Effect on Microstructure of Tungsten Under Helium Ions Irradiation with Multiple Energy[J]. Acta Metall Sin, 2017, 53(1): 70-76.

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摘要: 

利用SEM和慢正电子束分析(SPBA)方法研究了不同注量的多能氦离子注入和注氦后不同温度退火的多晶W中He相关缺陷的演化机制。结果表明,W材料中由多能氦离子注入引入的空位型缺陷数目随着He+注量的升高而增大;220 ℃退火引起注氦W样品中的间隙W原子与空位的复合,降低了材料中的空位型缺陷数目;450 ℃和650 ℃退火的注氦W材料中形成了He泡,He泡尺寸与退火温度有关,650 ℃退火的样品中观测到直径达600 nm的大尺寸He泡和孔洞结构。

关键词 WHe正电子湮没空位型缺陷    
Abstract

Tungsten is considered as the most promising candidate for plasma-facing materials in future nuclear fusion reactors. The damage behaviors of tungsten under different He irradiation are one of the main issue of concerns. In this work, the evolution of helium-related defect in polycrystalline tungsten was studied by slow positron beam analysis (SPBA) and SEM as functions of annealing temperature and implantation fluence. The results show that the number of vacancy-type defect induced by the multi-energy He irradiation increases with the increment of irradiation fluence. At the meantime, annealing at the temperature of 220 ℃ induces the recombination of interstitial W atoms with vacancies, thus reduces the number of the vacancy-type defects in the sample. And annealing at 450 and 650 ℃ leads to the formation of He bubbles in the tungsten materials, and the size of He bubbles in tungsten is related to the annealing temperature, and the He bubbles and holes with a diameter of about 600 nm could be observed for the specimen annealing at 650 ℃.

Key wordsW    He    positron annihilation    vacancy-type defect
收稿日期: 2016-06-29     
基金资助:资助项目 国家自然科学基金项目Nos.11275132和11675114
Sample 50 keV 35 keV 30 keV
1# 1.0 2.0 5.0
2# 1.5 3.0 7.5
3# 2.0 4.0 1.0
表 1  W样品编号和对应的He+注量
图1  SRIM-2013模拟得到He+辐照金属W后He含量和对应的损伤随深度的分布
图2  不同He+注量辐照的W样品的S-E图
图3  不同He+注量辐照钨样品的S-W图谱
图4  不同温度退火的注氦W样品的截面SEM像
图5  不同温度退火钨样品的S-E图
图6  不同温度退火的W样品的S-W图谱
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